News & Highlights
✓ January 1st, 2019
PON EleGaNTE starts
✓ May 15th, 2019
Review paper on e-mode HEMTs
✓ April 1st, 2020
New project ETMOS started
✓ September 23th, 2020
New book on Nitride Semiconductors Technology published
✓ December 11th, 2020
New paper on Dielectrics for e-mode HEMTs
✓ June 1st, 2021
New ECSEL JU Project on Gallium Nitride
✓ December 4th, 2021
New paper on GaN epitaxy
✓ January 22nd, 2022
New review paper on high-k dielectrics

 

 

 

 

 

Objectives

 

 

The main objective of EleGaNTE is to develop GaN components enabling technologies for the mm-wave frequency range for a RADAR FMCW (Frequency Modulated Continuous Wave) sensor capable to detect small obstacles for helicopters operating in critical conditions. The demonstrators of EleGaNTE will be a HPA (High Power Amplifier) working in the mm-waves and a high power normally-off HEMT (High Electron Mobility Transistor). To target such objectives, the activities will range from the definition of the operative specifications, to the material growth and development of technological processes, up to fabrication of demonstrators in industrial environments.

 

To achieve this ambitious goal, the project will develop a national autonomous solution for the fabrication of GaN devices, based on the synergy between the main industrial players and the National Research Council.

 

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